KSA539YTA 查看數據表（PDF） - Fairchild Semiconductor

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KSA539YTA

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

-200

-180

-160

-140

-120

-100

-80

-60

-40

-20

-0

I =-0.8mA

B

IB =-0.7mA

IB =-0.6mA

IB =-0.5mA

IB =-0.4mA

I =-0.3mA

B

I =-0.2mA

B

I =-0.1mA

B

-5 -10 -15 -20 -25 -30 -35 -40 -45 -50

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

-10

Ic = 10IB

-1

VBE(sat)

-0.1

VCE(sat)

-0.01

-1

-10

-100

-400

IC[mA], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

100

f = 1MHz

IE= 0

10

1000

VCE = -1V

100

10

-1

-10

-100

-1000

IC[mA], COLLECTOR CURRENT

Figure 2. DC current Gain

-200

VCE = -1V

-100

-10

-1

0

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

VBE[V], BASE-EMITTER VOLTAGE

Figure 4. Base-Emitter On Voltage

1

-1

-10

-100

VCB[V], COLLECTOR BASE VOLTAGE

Figure 5. Collector Output Capacitance

©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

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