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1SS356(2011) 查看數據表(PDF) - ROHM Semiconductor
零件编号
产品描述 (功能)
生产厂家
1SS356
(Rev.:2011)
Band Switching Diodes
ROHM Semiconductor
1SS356 Datasheet PDF : 6 Pages
1
2
3
4
5
6
1SS356
Data Sheet
100
10
Ta=75
℃
10
1
Ta=125
℃
1
Ta=25
℃
0.1
Ta=
25
℃
0.1
0.01
0.01
0.001
0.001
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
FORWARD VOLTAGE : V
F
(V)
V
F
-I
F
CHARACTERISTICS
0.0001
0
Ta=125
℃
10
Ta=75
℃
f=1MHz
Ta=25
℃
1
Ta=
25
℃
10
20
30
40
REVERSE VOLTAGE : V
R
(V)
V
R
-I
R
CHARACTERISTICS
0.1
50
0
5
10
15
20
25
30
REVERSE VOLTAGE : V
R
(V)
V
R
-Ct CHARACTERISTICS
850
10
f=100MHz
840
830
1
820
0.1
0.01
0.1
1
FORWARD CURRENT : I
F
(mA)
rf-I
F
CHARACTERISTICS
810
800
10
Ta=25
℃
I
F
=10mA
n=30pcs
AVE:0.833V
V
F
DISPERSION MAP
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
Ta=25
℃
V
R
=25V
n=30pcs
AVE:0.0116nA
I
R
DISPERSION MAP
1
20
0.9
Ta=25
℃
0.8
V
R
=6V
f=1MHz
15
0.7
n=10pcs
0.6
0.5
10
0.4
0.3
5
0.2
0.1
AVE:0.807pF
0
0
Ct DISPERSION MAP
5
Ifsm
1cyc
4
8.3ms
3
2
1
AVE:5.60A
0
I
FSM
DISRESION MAP
Ta=25
℃
V
R
=6V
I
F
=10mA
RL=100
Ω
Irr=0.1*I
R
n=10pcs
AVE:1.20ns
trr DISPERSION MAP
1
0.9
Ta=25
℃
f=100MHz
0.8
I
F
=2mA
0.7
n=10pcs
0.6
0.5
0.4
0.3
0.2
0.1
AVE:0.602
Ω
0
FORWARD CURRENT : I
F
(mA)
rf DISPERSION MAP
10
9
8
7
6
5
4
3
2
1
0
1
Ifsm
8.3ms 8.3ms
1cyc
10
100
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
100
10
1
0.1
Ifsm
t
1
10
100
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
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2/3
2011.08 - Rev.D
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