1SS356TW11 查看數據表（PDF） - ROHM Semiconductor

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1SS356TW11

Band switching diode

ROHM Semiconductor 

Diodes

1000

100

10

1

0.001

10

R th ( j- a)

9

8

7

R th ( j- c )

6

Mounted on epoxy board

5

IM=10mA

IF= 10 0m A

4

3

1ms time

300us

0.1

10

TIM E:t( s)

Rth-t CHARACTERISTICS

2

1

0

1000

A V E:6 .6 3 kV

AVE:0.88kV

C= 2 0 0 pF

R=0Ω

C = 1 0 0 pF

R = 1 .5 kΩ

ESD DISPERSION MAP

1SS356

Rev.B

3/3

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