A838 查看數據表（PDF） - Panasonic Corporation
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A838 Datasheet PDF : 3 Pages
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Transistor
2SA0838 (2SA838)
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC1359
I Features
G High transition frequency fT.
5.0±0.2
Unit: mm
4.0±0.2
I Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–30
V
Collector to emitter voltage VCEO
–20
V
Emitter to base voltage
VEBO
–5
V
Collector current
IC
–30
mA
Collector power dissipation PC
250
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
I Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
ICBO
ICEO
IEBO
hFE*
VCE(sat)
VBE
fT
NF
Reverse transfer impedance
Zrb
Common emitter reverse transfer
Cre
capacitance
VCB = –10V, IE = 0
VCE = –20V, IB = 0
– 0.1
µA
–100
VEB = –5V, IC = 0
–10
µA
VCE = –10V, IC = –1mA
70
220
IC = –10mA, IB = –1mA
– 0.1
V
VCE = –10V, IC = –1mA
– 0.7
V
VCB = –10V, IE = 1mA, f = 200MHz 150
300
MHz
VCB = –10V, IE = 1mA, f = 5MHz
2.8
4.0
dB
VCE = –10V, IC = –1mA, f = 2MHz
22
50
Ω
VCE = –10V, IC = –1mA,
f = 10.7MHz
1.2
2.0
pF
*hFE Rank classification
Rank
B
hFE
70 ~ 140
C
110 ~ 220
Note.) The Part number in the Parenthesis shows conventional part number.
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