2N6530 查看數據表（PDF） - New Jersey Semiconductor
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2N6530 Datasheet PDF : 2 Pages
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ELECTRICAL CHARACTERISTICS (Continued)
SYMBOL
HFE
hFE
VF
hfe
Ihfel
'S/b
ES/b
TEST CONDITIONS
2N6530
MIN MAX
VCE=3.0V, IC=3.0A
VCE=3.0V, IC=5.0A
1K 10K
VCE=3.0V, IC=8.0A
100 5K
IC=10A
2.8
VCE=5.0V, lc=1 .OA, f=1 .OkHz 11KK
VCE=5.0V, lc=1 .OA, f=1.0MHz 2200
VCB=10V, IE=0, f=1.0MHz
200
VcE=24V, t=0.5s nonrep.
2.7
VEB=1,5V, lc=4.5A,
120
RBE=100Q, L=12mH
2N6531
MIN MAX
500 10K
100 5K
2.8
1K
20
200
2.7
120
2N6532
2N6533
MIN MAX MIN MAX
1K 10K
1K 10K
100 5K 100 5K
2.8
2.8
1K
1K
20
20
200
200
2.7
2.7
120
120
JEDEC TO-220 CASE - MECHANICAL OUTLINE
UNITS
v
PF
A
mJ
-I
r B-l
T
H
SYMBOL
A
B
C
D
E
F (DIA)
G
H
I
J
K
L
M
DIMENSIONS
INCHES MILLIMETERS
MIN MAX MIN MAX
0.176 0.190 4.48 4.82
0.045 0.055 1.15 1.39
0.014 0.026 0.35 0.65
0.083 0.106 2.10 2.70
0.394 0.417 10.01 10.60
0.140 0.157 3.55 4.00
0.100 0.118 2.54 3.00
0.230 0.270 5.85 6.85
0.560 0.625 14.23 15.87
- 0.250 -
6.35
0.025 0.038 0.64 0.96
0,500 0.579 12.70 14.70
0.090 0.110 2.29 2.79
TO-220 (REV: R1)
M
R1
Lead Code:
1) Base
2) Collector
3) Emitter
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