2P4M 查看數據表（PDF） - Inchange Semiconductor

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2P4M

PLASTIC MOLDED THYRISTOR

Inchange Semiconductor 

Thyristors

2P4M

PLASTIC MOLDED THYRISTOR

INCHANGE

‹ Features

·With TO-202 package

·1cathode 2 anode 3 gate

KAG

‹ Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

MIN

UNIT

VDRM Repetitive peak off-state voltage

400 (note:RGK=1kΩ)

V

VRRM

IT(AV)

Repetitive peak reverse voltage

On-state current

400 (note:RGK=1kΩ)

V

2(Tc=77℃,θ=180。Single phase(1/2wave) A

ITSM Surge non-repetitive on-state current

20

A

PGM

PG(AV)

固IN电C半H导AN体GE SEMICONDUCTOR IFGM

VRGM

Tj

Peak gate power dissipation

Average gate power dissipation

Peak gate forward current

Peak gate reverse voltage

Junction temperature

0.5 (f ≥50Hz, Duty ≤10%)

0.1

0.2 (f ≥50Hz, Duty ≤10%)

6

-40 to + 125

‹ Electrical characteristics (Ta=25℃)

SYMBOL

PARAMETER

IRRM Repetitive peak reverse current

CONDITIONS

VRM=VRRM,Tj=125℃,RGK=1kΩ

MIN MAX

100

W

W

A

V

℃

UNIT

μA

IDRM Repetitive peak off-state current VDM=VDRM,Tj=125℃,RGK=1kΩ

100 μA

VTM On-state voltage

ITM=4A

1.8 V

IGT Gate-trigger current

VDM=6V;RL=100Ω,RGK=1kΩ

100 μA

VGT Gate-trigger voltage

VDM=6V;RL=100Ω,RGK=1kΩ

0.8 V

VGD Gate non-trigger voltage

VDRM=1/2VDRM,Tj=125℃,RGK=1kΩ 0.2

V

IH

Holding current

VD=24V; RGK=1kΩ,ITM=4A

5 mA

Rth(j-c) Thermal resistance

Junction to case

10 ℃/W

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