74HCT1G08-Q100 查看數據表（PDF） - NXP Semiconductors.
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74HCT1G08-Q100 Datasheet PDF : 12 Pages
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NXP Semiconductors
74HC1G08-Q100; 74HCT1G08-Q100
2-input AND gate
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb = 25 C.
Symbol Parameter
Conditions
40 C to +85 C 40 C to +125 C
Min Typ Max Min
Max
74HCT1G08-Q100
VIH
HIGH-level input
VCC = 4.5 V to 5.5 V
voltage
2.0 1.6 -
2.0
-
VIL
LOW-level input
VCC = 4.5 V to 5.5 V
voltage
-
1.2 0.8 -
0.8
VOH
HIGH-level output
VI = VIH or VIL
voltage
IO = 20 A; VCC = 4.5 V
4.4 4.5 -
4.4
-
IO = 2.0 mA; VCC = 4.5 V
4.13 4.32 -
3.7
-
VOL
LOW-level output
VI = VIH or VIL
voltage
IO = 20 A; VCC = 4.5 V
-
0
0.1 -
0.1
IO = 2.0 mA; VCC = 4.5 V
-
0.15 0.33 -
0.4
II
input leakage current VI = VCC or GND; VCC = 5.5 V -
-
1.0 -
1.0
ICC
supply current
VI = VCC or GND; IO = 0 A;
-
-
10 -
20
VCC = 5.5 V
ICC
additional supply
per input; VCC = 4.5 V to 5.5 V; -
-
500 -
850
current
VI = VCC 2.1 V; IO = 0 A
CI
input capacitance
- 1.5 -
-
-
Unit
V
V
V
V
V
V
A
A
A
pF
11. Dynamic characteristics
Table 8. Dynamic characteristics
GND = 0 V; tr = tf 6.0 ns; All typical values are measured at Tamb = 25 C. For test circuit see Figure 6
Symbol Parameter
Conditions
40 C to +85 C
40 C to +125 C Unit
Min Typ Max Min
Max
74HC1G08-Q100
tpd
propagation delay A and B to Y; see Figure 5
VCC = 2.0 V; CL = 50 pF
VCC = 4.5 V; CL = 50 pF
VCC = 5.0 V; CL = 15 pF
VCC = 6.0 V; CL = 50 pF
CPD
power dissipation VI = GND to VCC
capacitance
[1]
-
25
115 -
135
ns
-
9
23
-
27
ns
-
7
-
-
-
ns
-
8
20
-
23
ns
[2] -
19
-
-
-
pF
74HCT1G08-Q100
tpd
propagation delay A and B to Y; see Figure 5
VCC = 4.5 V; CL = 50 pF
VCC = 5.0 V; CL = 15 pF
[1]
-
11
23
-
27
ns
-
11
-
-
-
ns
74HC_HCT1G08_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 August 2012
© NXP B.V. 2012. All rights reserved.
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