BF994 查看數據表（PDF） - NXP Semiconductors.
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BF994 Datasheet PDF : 8 Pages
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NXP Semiconductors
N-channel dual-gate MOS-FET
Product specification
BF994S
STATIC CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IG1-SS
IG2-SS
V(BR)G1-SS
V(BR)G2-SS
IDSS
V(P)G1-S
V(P)G2-S
gate 1 cut-off currents
gate 2 cut-off currents
gate 1-source breakdown voltage
gate 2-source breakdown voltage
drain-source cut-off voltage
gate 1-source cut-off voltage
gate 2-source cut-off voltage
VG1-S = 5 V; VG2-S = VDS = 0
VG2-S = 5 V; VG1-S = VDS = 0
IG1-SS = 10 mA; VG2-S = VDS = 0
IG2-SS = 10 mA; VG1-S = VDS = 0
VDS = 15 V; VG1-S = 0; VG2-S = 4 V
ID = 20 A; VDS = 15 V; VG2-S = 4 V
ID = 20 A; VDS = 15 V; VG1-S = 0
MIN.
6
6
4
MAX. UNIT
50 nA
50 nA
20 V
20 V
20
mA
2.5 V
2
V
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): ID = 10 mA; VDS = 15 V; VG2-S = 4 V; Tamb = 25 C.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Yfs
Cig1-s
Cig2-s
Crs
Cos
F
Gp
transfer admittance
f = 1 kHz
15
18
mS
input capacitance at gate 1 f = 1 MHz
2.5 3
pF
input capacitance at gate 2 f = 1 MHz
1.2
pF
feedback capacitance
f = 1 MHz
25
fF
output capacitance
f = 1 MHz
1
pF
noise figure
power gain
f = 200 MHz; GS = 2 mS; BS = BSopt
1
dB
f = 200 MHz; GS = 2 mS; BS = BSopt;
25
dB
GL = 0.5 mS; BL = BLopt
July 1993
4
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