2SB1230 查看數據表（PDF） - Inchange Semiconductor
零件编号
产品描述 (功能)
生产厂家
2SB1230 Datasheet PDF : 3 Pages
| |||
Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1230
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-5mA;RBE=∞
-100
V
V(BR)CBO Collector-base breakdown voltage
IC=-1mA; IE=0
-110
V
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA; IC=0
-6
V
VCEsat Collector-emitter saturation voltage IC=-6A; IB=-0.6A
-0.8
V
VBE sat Base-emitter saturation voltage
IC=-6A; IB=-0.6A
-1.5
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-100 μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-100 μA
体 hFE-1
DC current gain
固I电NC半H导ANGE SEMICONDUCTOR hFE-2
DC current gain
hFE-1 Classifications
P
Q
IC=-1.5A ; VCE=-2V
IC=-6A ; VCE=-2V
50
140
20
50-100
70-140
2
Share Link: 