2SA1096 查看數據表（PDF） - New Jersey Semiconductor

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2SA1096

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

2SA1096

ELECTRICAL CHARACTERISTICS

Tc=25°C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(6R)CEO Collector-Emitter Breakdown Voltage lc= -2mA; IB= 0

-50

V

V(BR)CBO Collector-Base Breakdown Voltage

lc=-1mA; IE=0

-70

V

VcE(sat) Collector-Emitter Saturation Voltage IC=-1.5A;IB=-0.15A

VeE(sat) Base-Emitter Saturation Voltage

IC=-1.5A;IB=-0.15A

ICBO

Collector Cutoff Current

VCB= -20V; IE= 0

-1.0

V

-1.5

V

-1

MA

ICEO

Collector Cutoff Current

VCE=-10V; IB=0

-100 U A

IEBO

Emitter Cutoff Current

VEB= -5V; lc= 0

-10

uA

hFE

DC Current Gain

lo=-1A;VoE=-5V

80

220

fi

Current-Gain—Bandwidth Product

IE= 0.5A; VCB= -5V; f= 200MHz

150

MHz

COB

Output Capacitance

|E=O;VCB= -20V; f= 1.0MHz

55

PF

Classifications

Q

R

80-160 120-220

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