FT1216DH 查看數據表（PDF） - Formosa Technology
零件编号
产品描述 (功能)
生产厂家
FT1216DH Datasheet PDF : 4 Pages
| |||
FT12...H
HIGH COMMUTATION TRIAC
Electrical Characteristics
SYMBOL
PARAMETER
CONDITIONS
Quadrant
SENSITIVITY Unit
11 14 16
IGT (1)
Gate Trigger Current
IDRM /IRRM Off-State Leakage Current
Vto (2)
Rd(2)
VTM (2)
VGT
VGD
IH (2)
IL
Threshold Voltage
Dynamic Resistance
On-state Voltage
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
Latching Current
VD = 12 VDC , RL = 30Ω, Tj = 25 ºC Q1÷Q3 MAX 25 35
VD = VDRM , RGK = 1KΩ, Tj = 125 ºC
MAX
1
VR = VRRM ,
Tj = 25 ºC
MAX
5
Tj = 125 ºC
MAX
0.85
Tj = 125 ºC
MAX
35
IT = 17 Amp, tp = 380 µs, Tj = 25 ºC
MAX
1.55
VD = 12 VDC , RL = 30Ω, Tj = 25 ºC Q1÷Q3 MAX
1.3
VD = VDRM , RL = 3.3KΩ, Tj = 125 ºC Q1÷Q3 MIN
0.2
IT = 100 mA , Gate open, Tj = 25 ºC
MAX 25 35
IG = 1.2 IGT, Tj = 25 ºC
Q1,Q3 MAX 40 50
50 mA
mA
µA
V
mΩ
V
V
V
50 mA
70 mA
dv / dt (2) Critical Rate of Voltage Rise
(dI/dt)c (2) Critical Rate of Current Rise
Rth(j-c)
Thermal Resistance
Junction-Case
VD = 0.67 x VDRM , Gate open
Tj = 125 ºC
(dv/dt)c= 0.1 V/µs
(dv/dt)c= 10 V/µs
without snubber
Tj = 125 ºC
Tj = 125 ºC
Tj = 125 ºC
for AC 360º conduction angle
Q2 MAX 50 60 80
MIN 200 500 1000 V/µs
MIN - -
MIN - -
MIN 5.3 6.5
1.4
- A/ms
-
12
ºC/W
Rth(j-a)
Thermal Resistance
Junction-Ambient
60
ºC/W
(1) Minimum IGT is guaranted at 5% of IGT max.
(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.
PART NUMBER INFORMATION
FAGOR
TRIAC
CURRENT
F T 12
14 B H 00 TU
PACKAGING
FORMING
CASE
VOLTAGE
SENSITIVITY
Jun - 03
Share Link: 