BUP400D 查看數據表（PDF） - Infineon Technologies

零件编号

产品描述 (功能)

生产厂家

BUP400D

IGBT With Antiparallel Diode

Infineon Technologies 

BUP 400D

Maximum Ratings

Parameter

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Symbol

-

-

Values

Unit

E

-

55 / 150 / 56

Thermal Resistance

Thermal resistance, chip case

Diode thermal resistance, chip case

RthJC

RthJCD

≤ 1.25

K/W

≤ 2.5

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Gate threshold voltage

VGE = VCE, IC = 0.35 mA

Collector-emitter saturation voltage

VGE = 15 V, IC = 10 A, Tj = 25 °C

VGE = 15 V, IC = 10 A, Tj = 125 °C

VGE = 15 V, IC = 20 A, Tj = 25 °C

VGE = 15 V, IC = 20 A, Tj = 125 °C

Zero gate voltage collector current

VCE = 600 V, VGE = 0 V, Tj = 25 °C

Gate-emitter leakage current

VGE = 25 V, VCE = 0 V

AC Characteristics

Transconductance

VCE = 20 V, IC = 10 A

Input capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Output capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Reverse transfer capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

VGE(th)

V

4.5

5.5

6.5

VCE(sat)

-

2.1

2.7

-

2.2

2.8

-

3

-

-

3.3

-

ICES

-

-

µA

160

IGES

-

-

nA

100

gfs

2

Ciss

-

Coss

-

Crss

-

S

-

-

pF

570

760

80

120

50

75

Semiconductor Group

2

Jul-31-1996

Share Link: