SWD4N60 查看數據表（PDF） - Xian Semipower Electronic Technology Co., Ltd.
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SWD4N60 Datasheet PDF : 7 Pages
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SAMWIN
SW4N60B
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Off characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to source breakdown voltage
Breakdown voltage temperature
coefficient
IDSS Drain to source leakage current
VGS=0V, ID=250uA
600
ID=250uA, referenced to 25oC
VDS=600V, VGS=0V
VDS=480V, TC=125oC
Gate to source leakage current, forward VGS=30V, VDS=0V
IGSS
Gate to source leakage current, reverse VGS=-30V, VDS=0V
On characteristics
VGS(TH) Gate threshold voltage
VDS=VGS, ID=250uA
2
RDS(ON) Drain to source on state resistance
VGS=10V, ID = 2A
Gfs Forward Transconductance
VDS = 30 V, ID = 2 A
2
Dynamic characteristics
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
td(on) Turn on delay time
tr
Rising time
td(off) Turn off delay time
tf
Fall time
Qg
Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VGS=0V, VDS=25V, f=1MHz
VDS=300V, ID=4A, RG=25Ω
(note 4,5)
VDS=480V, VGS=10V, ID=4A
(note 4,5)
Typ.
1.63
2
463
63
19
10
21
17
21
11
3
4
Max. Unit
V
V/oC
1 uA
50 uA
100 nA
-100 nA
4
V
2.5 Ω
S
pF
20
40
ns
40
40
25
nC
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
IS
Continuous source current
ISM
Pulsed source current
VSD Diode forward voltage drop.
Trr
Reverse recovery time
Qrr
Reverse recovery Charge
Integral reverse p-n Junction
diode in the MOSFET
IS=4A, VGS=0V
IS=4A, VGS=0V,
dIF/dt=100A/us
※. Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2.
L = 33.9mH, IAS = 4A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 4A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
5. Essentially independent of operating temperature.
Min.
Typ.
260
1.8
Max. Unit
4
A
16 A
1.5 V
ns
uC
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev. 3.0
2/7
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