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FT1616DH 查看數據表(PDF) - Formosa Technology

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产品描述 (功能)
生产厂家
FT1616DH
FAGOR
Formosa Technology FAGOR
FT1616DH Datasheet PDF : 4 Pages
1 2 3 4
FT16...H
HIGH COMMUTATION TRIAC
Electrical Characteristics
SYMBOL
PARAMETER
CONDITIONS
Quadrant
SENSITIVITY Unit
IGT (1)
Gate Trigger Current
IDRM /IRRM Off-State Leakage Current
Vto (2)
Rd(2)
VTM (2)
VGT
VGD
IH (2)
IL
Threshold Voltage
Dynamic Resistance
On-state Voltage
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
Latching Current
VD = 12 VDC , RL = 30, Tj = 25 ºC
VD = VDRM , RGK = 1K, Tj = 125 ºC
VR = VRRM ,
Tj = 25 ºC
Tj = 125 ºC
Tj = 125 ºC
IT = 22.5 Amp, tp = 380 µs, Tj = 25 ºC
VD = 12 VDC , RL = 30, Tj = 25 ºC
VD = VDRM , RL = 3.3K, Tj = 125 ºC
IT = 100 mA , Gate open, Tj = 25 ºC
IG = 1.2 IGT, Tj = 25 ºC
dv / dt (2) Critical Rate of Voltage Rise
(dI/dt)c (2) Critical Rate of Current Rise
VD = 0.67 x VDRM , Gate open
Tj = 125 ºC
(dv/dt)c= 0.1 V/µs
Tj = 125 ºC
(dv/dt)c= 10 V/µs
Tj = 125 ºC
without snubber
Tj = 125 ºC
Rth(j-c)
Thermal Resistance
Junction-Case
for AC 360º conduction angle
Rth(j-a)
Thermal Resistance
Junction-Ambient
Q1÷Q3 MAX
MAX
MAX
MAX
MAX
MAX
Q1÷Q3 MAX
Q1÷Q3 MIN
MAX
Q1,Q3 MAX
Q2 MAX
MIN
MIN
MIN
MIN
11 14
25 35
2
5
0.85
25
1.55
1.3
0.2
25 35
40 50
50 60
200 500
--
--
7.1 8.5
1.2
60
16
50 mA
mA
µA
V
m
V
V
V
50 mA
70 mA
80
1000 V/µs
- A/ms
-
14
ºC/W
ºC/W
(1) Minimum IGT is guaranted at 5% of IGT max.
(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.
PART NUMBER INFORMATION
FAGOR
TRIAC
CURRENT
F T 16
11 B H 00 TU
PACKAGING
FORMING
CASE
VOLTAGE
SENSITIVITY
Jun - 03

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