BAP50-04W 查看數據表（PDF） - NXP Semiconductors.
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BAP50-04W Datasheet PDF : 8 Pages
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Philips Semiconductors
General purpose PIN diode
Product specification
BAP50-04W
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per diode
VF
forward voltage
IF = 50 mA
−
VR
reverse voltage
IR = 10 µA
50
IR
reverse current
VR = 50 V
−
Cd
diode capacitance
VR = 0; f = 1 MHz
−
VR = 1 V; f = 1 MHz
−
VR = 5 V; f = 1 MHz
−
rD
diode forward resistance IF = 0.5 mA; f = 100 MHz; note 1
−
IF = 1 mA; f = 100 MHz; note 1
−
IF = 10 mA; f = 100 MHz; note 1
−
τL
charge carrier life time when switched from IF = 10 mA to IR = 6 mA; −
RL = 100 Ω; measured at IR = 3 mA
LS
series inductance
IF = 10 mA; f = 100 MHz
−
0.95 1.1 V
−
−
V
−
100 nA
0.45 −
pF
0.35 0.6 pF
0.30 0.5 pF
25 40 Ω
14 25 Ω
3
5
Ω
1.05 −
µs
1.60 −
nH
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
VALUE
250
UNIT
K/W
2001 Jan 29
3
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