STP4NB80 查看數據表（PDF） - STMicroelectronics

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STP4NB80

N-CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH MOSFET

STMicroelectronics 

STP4NB80

®

STP4NB80FP

N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP

PowerMESH™ MOSFET

TYPE

VDSS

RDS(on)

ID

STP4NB80

800 V

3.3 Ω

4A

STP4NB80FP

800 V

3.3 Ω

4A

s TYPICAL RDS(on) = 3 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s VERY LOW INTRINSIC CAPACITANCES

s GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITCH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

3

2

1

TO-220

3

2

1

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

VDGR

VGS

ID

ID

IDM(•)

Ptot

Drain-source Voltage (VGS = 0)

Drain- gate Voltage (RGS = 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

Drain Current (pulsed)

Total Dissipation at Tc = 25 oC

Derating Factor

dv/dt(1) Peak Diode Recovery voltage slope

VISO Insulation Withstand Voltage (DC)

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

(*) Limited only by maximum temperature allowed

September 2001

Value

STP4NB80 STP4NB80FP

800

800

± 30

4

4(*)

2.4

2.4(*)

16

16

100

35

0.8

0.28

4.5

4.5



2500

-65 to 150

150

(1) ISD ≤4 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

Unit

V

V

V

A

A

A

W

W/oC

V/ns

V

oC

oC

1/9

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