FX602 查看數據表（PDF） - SANYO -> Panasonic

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FX602

N-Channel Silicon MOSFET

SANYO -> Panasonic 

Ordering number:EN4885

FX602

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Features

· Composite type composed of two low ON-resistance

N-channel MOSFET chips for ultrahigh-speed

switching and low-voltage drive.

· Facilitates high-density mounting.

· The FX602 is formed with two chips, each being

equivalent to the 2SK2152, placed in one package.

· Matched pair characteristics.

Package Dimensions

unit:mm

2120

[FX602]

Switching Time Test CIrcuit

Electrical Connection

1:Gate1

2:Source1

3:Source2

4:Gate2

5:Drain2

6:Drain1

(Top view)

1:Gate1

2:Source1

3:Source2

4:Gate2

5:Drain2

6:Drain1

SANYO:XP6

(Bottom view)

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Total Dissipation

Channel Temperature

Storage Temperature

Symbol

VDSS

VGSS

ID

IDP

PD

PD

PT

Tch

Tstg

· Marking:602

Conditions

PW≤10µs, duty cycle≤1%

Tc=25˚C, 1unit

Mounted on ceramic board (750mm2×0.8mm) 1unit

Mounted on ceramic board (750mm2×0.8mm)

Ratings

Unit

20 V

±15 V

2A

8A

6W

1.5 W

2W

150 ˚C

–55 to +150 ˚C

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52098HA (KT)/71095MO (KOTO) TA-0108 No.4885-1/4

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