S504T 查看數據表（PDF） - Vishay Semiconductors

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S504T

MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage

Vishay Semiconductors 

S504T/S504TR/S504TRW

Vishay Semiconductors

Absolute Maximum Ratings

Tamb = 25_C, unless otherwise specified

Parameter

Drain - source voltage

Drain current

Gate 1/Gate 2 - source peak current

Gate 1/Gate 2 - source voltage

Total power dissipation

Channel temperature

Storage temperature range

Test Conditions

Tamb ≤ 60 °C

Symbol

Value

Unit

VDS

8

V

ID

25

mA

±IG1/G2SM

10

mA

±VG1/G2SM

6

V

Ptot

200

mW

TCh

150

°C

Tstg

–55 to +150 °C

Maximum Thermal Resistance

Tamb = 25_C, unless otherwise specified

Parameter

Test Conditions

Symbol

Value

Unit

m Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3

plated with 35 m Cu

RthChA

450

K/W

Electrical DC Characteristics

Tamb = 25_C, unless otherwise specified

Parameter

Test Conditions

Drain - source

m ID = 10 A, VG1S = VG2S = 0

breakdown voltage

Gate 1 - source

±IG1S = 10 mA, VG2S = VDS = 0

breakdown voltage

Gate 2 - source

±IG2S = 10 mA, VG1S = VDS = 0

breakdown voltage

Gate 1 - source

leakage current

+VG1S = 5 V, VG2S = VDS = 0

Gate 2 - source

leakage current

Drain - source op-

erating current

Gate 1 - source

cut-off voltage

Gate 2 - source

cut-off voltage

±VG2S = 5 V, VG1S = VDS = 0

W VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 220 k

m VDS = 5 V, VG2S = 4 V, ID = 20 A

W m VDS = VRG1 = 5 V, RG1 = 220 k , ID = 20 A

Symbol Min Typ Max Unit

V(BR)DSS 15

V

±V(BR)G1SS 7

10 V

±V(BR)G2SS 7

10 V

+IG1SS

20 nA

±IG2SS

20 nA

IDSO

7 10 14 mA

VG1S(OFF) 0.4

1.2 V

VG2S(OFF)

1.0

V

Remark on driving the MOSMIC and improving intermodulation behavior:

W By setting RG1 = 150 k typical value of IDSO will raise up to 15 mA and improved intermodulation behavior will

be performed.

www.vishay.com

2 (5)

Document Number 85043

Rev. 5, 05-Jun-01

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