P6SMBJ13A 查看數據表（PDF） - TY Semiconductor

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P6SMBJ13A

Surface Mount unidirectional and bidirectional Transient Voltage Suppressor Diodes

TY Semiconductor 

■ Features

● For surface mounted applications in order to optimize board space.

● Low profile package

● Built-in strain relief

● Glass passivated junction

● Excellent clamping capability

● Low inductance

Product specification

P6SMBJ75A

DO-214AA(SMB)

2.108

1.905

2

4.699

4.064

3.937 2.30

1

3.302 2.10

Unit: mm

4.12

3.92

5.588

5.080

2.348

2.108

2.65

2.45

5.59

5.39

Recommended

Land Pattern

1.270

0.762

0.203

0.051

0.305

0.152

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Peak Power Dissipation at TA=25℃, TP=1ms (Note 1,2)

Peak Forward Surge Current

(Note 2,3)

Peak Pulse Current Current on 10/1000μs waveform (Note 1)

Operating and Storage Temperature Range

Symbol

PPPM

IFSM

IPPM

Tj, TSTG

Ratings

Minimum 600

100

See Table

-55 to +150

Units

W

A

A

℃

■ Electrical Characteristics Ta = 25℃

Part Number

P6SMBJ75A

Reverse

Stand-off Voltage

VRWM

V

75

Breakdown

Voltage

VBR @ I T

Min.

Max.

V

V

83.3

95.8

Test

Reverse Leakage

Current

Max.

Clamp

Voltage

IT

I R @ VRWM

VC @ IPP

mA

μA

V

1.0

5

12.1

Peak

Pulse

Current

I PP

A

4.9

NOTES:

1.Non-repetitive current pulse, per Fig. 3 and derated above TA=25℃ per

2.Mounted on 5.0mm2 ( .013mm thick) land areas.

3.Measured on 8.3ms , single half sine-wave or equivalent square wave , duty cycle= 4 pulses per minutes maximum.

■ Marking

Marking

NR

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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