P6SMBJ13A 查看數據表（PDF） - TY Semiconductor
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P6SMBJ13A
TY Semiconductor
P6SMBJ13A Datasheet PDF : 2 Pages
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■ Typical Characteristics
100
10
Non-Repetitve
Pulse Wavefom
Shown in Flgure3
TA=25 C
1.0
Mounted on 5.0mm
Copper Land Areas
0.1
0.1US 1.0US
10US
100US
1.0ms
tP ,PULSE WIDTH
Figure 1,Peak Pulse Power Rating Curve
10ms
150
100
tf=10 sec
Peak Value
Ippm
TA=25 C
Pulse Width (td) is Defined
as the Point Where the Peak
Current Decays to 50% of Ipp
Half Value-Ipp
2
50
td
0
0
6,000
4,000
2,000
1,000
800
600
400
200
10/1000 sec Waveform
as Defined bye R.E.A.
e-kt
1.0
2.0
3.0
4.0
t,TIME (ms)
Figure 3,Pulse Waveform
Tj=25 C
f=1.0MHZ
Vsig=50mVp-p
Measured at
Zero Bias
Measured at
Stand-Off
Voltahe(V MW)
100
80
60
40
20
10
1.0 2.0 5.0 10 20 50 100 200
V(BR), BREAKDOWN VOLTAGE, VOLTS
Figure 5,Typical Capacitance
Product specification
P6SMBJ75A
100
75
50
25
0
0
200
100
25 50 75 100 125 150 175 200
TA , AMBIENT TEMPERATURE (℃ )
Figure 2,Derating Curve
TJ=TJmax
8.3ms Single Half Since-Wave
JEDEC Method
50
10
1
5
10
50 100
TL, LEAD TEMPERATURE, C
Figure 4,Maximum Non-Repetitive Peak Foward Surge Current
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