DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

NTE314 查看數據表(PDF) - NTE Electronics

零件编号
产品描述 (功能)
生产厂家
NTE314 Datasheet PDF : 2 Pages
1 2
Electrical Characteristics (Cont’d): (VD = 400V, TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
Forward ONVoltage
VTM ITM = 25A Peak, Note 2
1.1 1.8
Gate Trigger Current (Continuous DC) IGT VD = 12V, RL = 24, TJ = +25°C
7 40
VD = 12V, RL = 24, TJ = 40°C
80
Gate Trigger Voltage (Continuous DC) VGT VD = 12V, RL = 24, TJ = 40°C
1
3
VD = 12V, RL = 24, TJ = +25°C
0.68 2
VD = 12V, RL = 24, TJ = +100°C 0.3
Holding Current
IH VD = 12V, IT = 0.5A
20 50
TurnOn Time
tgt ITM = 8A, IG = 0.2A, tr = 100ns
0.5
TurnOff Time
tq
ITM = 8A, IG = 0.2A, dv/dt = 20V/µs,
20
di/dt = 30A/µs, TC = +80°C,
Pulse Width 50µs
Forward Voltage Application Rate
Exponential
dv/dt TC = +100°C
10 100
Unit
V
mA
mA
V
V
V
mA
µs
µs
V/µs
Note 2. Pulse test: Pulse Width 1ms, Duty Cycle 1%.
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
.040 (1.02)
Cathode
1.187 (30.16)
.215 (5.45)
.430
(10.92)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Gate
.525 (13.35) R Max
Anode/Case

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]