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PTVS17VP1UP 查看數據表(PDF) - NXP Semiconductors.

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PTVS17VP1UP
NXP
NXP Semiconductors. NXP
PTVS17VP1UP Datasheet PDF : 12 Pages
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NXP Semiconductors
PTVSxP1UP series
600 W Transient Voltage Suppressor
150
IPP
(%)
100
100 % IPP; 10 μs
006aab319
50 % IPP; 1000 μs
50
1.2
PPPM
PPPM(25°C)
0.8
0.4
006aab321
0
0
1.0
2.0
3.0
4.0
tp (ms)
Fig 1. 10/1000 μs pulse waveform according to
IEC 61643-321
105
PPPM
(W)
104
006aac172
103
0
0
50
100
150
200
Tj (°C)
Fig 2.
Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
104
Cd
(pF)
103
006aac173
(1)
(2)
(3)
102
(4)
102
101
1
10
102
103
104
10
1
tp (μs)
10
102
VR (V)
Tamb = 25 °C
Fig 3. Rated peak pulse power as a function of pulse
duration; typical values
Tamb = 25 °C; f = 1 MHz
(1) PTVS5V0P1UP
(2) PTVS12VP1UP
(3) PTVS24VP1UP
(4) PTVS64VP1UP
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
PTVSXP1UP_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 6 January 2011
© NXP B.V. 2011. All rights reserved.
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