IRFZ34N(1995) 查看數據表（PDF） - International Rectifier
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IRFZ34N Datasheet PDF : 8 Pages
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IRFZ34N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
55 ––– ––– V VGS = 0V, ID = 250µA
––– 0.052 ––– V/°C Reference to 25°C, I D = 1mA
––– ––– 0.040 Ω VGS = 10V, ID = 16A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
6.5 ––– ––– S VDS = 25V, ID = 16A
––– ––– 25 µA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 44V, VGS = 0V, TJ = 150°C
––– ––– 100
nA
––– ––– -100
VGS = 20V
VGS = -20V
––– ––– 34
ID = 16A
––– ––– 6.8 nC VDS = 44V
––– ––– 14
VGS = 10V, See Fig. 6 and 13
––– 7.0 –––
VDD = 28V
––– 49 ––– ns ID = 16A
––– 31 –––
RG = 18Ω
––– 40 –––
RD = 1.8Ω, See Fig. 10
Between lead,
––– 4.5 –––
nH 6mm (0.25in.)
from package
––– 7.5 –––
and center of die contact
––– 700 –––
VGS = 0V
––– 240 ––– pF VDS = 25V
––– 100 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 26
showing the
A
integral reverse
––– ––– 100
p-n junction diode.
––– ––– 1.6
––– 57 86
––– 130 200
V TJ = 25°C, I S = 16A, VGS = 0V
ns TJ = 25°C, I F = 16A
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting T J = 25°C, L = 610µH
RG = 25Ω, IAS = 16A. (See Figure 12)
ISD ≤ 16 A, di/dt ≤ 420A/µs, V DD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
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