A836 查看數據表（PDF） - WEJ ELECTRONIC CO.

零件编号

产品描述 (功能)

生产厂家

A836

PNP TRANSISTOR

WEJ ELECTRONIC CO. 

RoHS

2SA836

2SA836 TRANSISTOR (PNP)

D FEATURES

TO-92

T Power dissipation

.,L PCM : 0.2 W (Tamb=25℃)

Collector current

O ICM: -0.1 A

Collector-base voltage

C V(BR)CBO : -55 V

Operating and storage junction temperature range

1. EMITTER

2. COLLECTOR

3. BASE

TJ, Tstg: -55℃ to +150℃

IC ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

123

TYP MAX

N Collector-base breakdown voltage

V(BR)CBO

Ic= -10µA , IE=0

-55

O Collector-emitter breakdown voltage

V(BR)CEO

IC= -1 mA , IB=0

-55

Emitter-base breakdown voltage

V(BR)EBO

IE= -10µA, IC=0

-5

R Collector cut-off current

ICBO

VCB=-18V, IE=0

-0.1

T Emitter cut-off current

IEBO

VEB= -2V , IC=0

-0.05

C DC current gain

hFE

VCE=-12 V, IC= -2mA

160

500

E Collector-emitter saturation voltage

VCEsat

IC= -10mA, IB= -1mA

-0.5

L Base-emitter voltage

VBE(ON)

VCE=-12 V, IC= -2mA

-0.75

UNIT

V

V

V

µA

µA

V

V

E Transition frequency

fT

VCE=-12 V, IC= -2mA

150

MHz

J Output capacitance

WENoise figure

Cob

VCE=-10V, IE=0,f=1 MHz

VCE=-6V, IC=0.1 mA,

NF

f=1 0Hz, RG=10KΩ

VCE=-6V, IC=0.1 mA,

f=1 kHz, RG=10KΩ

4

pF

5

dB

1

CLASSIFICATION OF hFE

Rank

Range

C

160-320

D

250-500

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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