RJP5001APP-M0-T2 查看數據表（PDF） - Renesas Electronics

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RJP5001APP-M0-T2

Nch IGBT for Strobe Flash

Renesas Electronics 

RJP5001APP-M0

Preliminary

Electrical Characteristics

Parameter

Collector-emitter breakdown voltage

Collector-emitter leakage current

Gate-emitter leakage current

Gate-emitter threshold voltage

Collector-emitter saturation voltage

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Symbol

V(BR)CES

ICES

IGES

VGE(th)

VCE(sat)

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Min.

500

—

—

1.3

—

—

—

—

—

—

—

—

Typ.

—

—

—

—

4.7

2050

130

12

0.10

0.43

0.20

0.55

Max.

—

10

0.1

2.7

10

—

—

—

—

—

—

—

Unit

V

A

A

V

V

pF

pF

pF

s

s

s

s

(Tj = 25°C)

Test conditions

IC = 100 A, VGE = 0 V

VCE = 500 V, VGE = 0 V

VGE = 17 V, VCE = 0 V

VCE = 10 V, IC = 1 mA

IC = 300 A, VGE = 12 V

VCE = 25 V

VGE = 0 V

f = 1 MHz

IC = 300 A

VGE = 12 V

VCC = 300 V

RG = 30 

Performance Curves

Maximum Pulse Collector Current

400

CM = 2000 μF

Tc ≤ 70°C

300

200

100

0

0

4

8

12 16 20

Gate-Emitter Voltage VGE (V)

R07DS0750EJ0100 Rev.1.00

Apr 26, 2012

Page 2 of 4

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