UF740L-TF2-R 查看數據表（PDF） - Unisonic Technologies
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UF740L-TF2-R Datasheet PDF : 6 Pages
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UF740
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
Measured From the Modified MOSFET
Contact Screw on Symbol Showing the
Tab to Center of Internal Devices
Die
Inductances
Internal Drain Inductance
LD Measured From the
Drain Lead, 6mm
(0.25in) From
Package to Center
of Die
Measured From the
Source Lead, 6mm
Internal Source Inductance
LS (0.25in) From
Header to Source
Bonding Pad
SOURCE TO DRAIN DIODE SPECIFICATIONS
Source to Drain Diode Voltage
VSD TJ = 25°C, ISD = 10A, VGS = 0V (Note 1)
Continuous Source to Drain
Modified MOSFET
Current
IS
Symbol Showing
the Integral Reverse
Pulse Source to Drain Current
(Note 2)
P-N Junction Diode
ISM
MIN TYP MAX UNIT
3.5
nH
4.5
nH
7.5
nH
2.0 V
10 A
40 A
Reverse Recovery Time
trr TJ = 25°C, ISD = 10A, dISD/dt = 100A/μs
Reverse Recovery Charge
QRR TJ = 25°C, ISD = 10A, dISD/dt = 100A/μs
Notes:
1. Pulse Test: Pulse width ≤ 300μs, Duty Cycle≤2%.
2. Repetitive rating: Pulse width limited by maximum junction temperature.
3. (VDD=50V, starting TJ =25°C, L=9.1mH, RG=25Ω, peak IAS = 10A)
170 390 790 ns
1.6 4.5 8.2 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-078,E
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