Q67000-S306 查看數據表（PDF） - Infineon Technologies

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Q67000-S306

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

Rev. 1.0

BSP123

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

Dynamic Characteristics

Transconductance

gfs

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

min. typ. max.

VDS≥2*ID*RDS(on)max,

ID=0.3A

VGS=0, VDS=25V,

f=1MHz

VDD=50V, VGS=10V,

ID=0.37A, RG=6Ω

0.13 0.27 - S

-

56 70 pF

-

9 11.3

-

3.5 4.4

-

3.3

5 ns

-

3.2 4.8

-

8.7 13

-

9.4 14

Gate Charge Characteristics

Gate to source charge

Qgs

VDD=80V, ID=0.37A

Gate to drain charge

Gate charge total

Qgd

Qg

VDD=80V, ID=0.37A,

VGS=0 to 10V

Gate plateau voltage

V(plateau) VDD=80V, ID = 0.37 A

- 0.09 0.13 nC

-

0.8 1.2

-

1.6 2.4

- 3.61 - V

Reverse Diode

Inverse diode continuous

IS

forward current

TA=25°C

-

- 0.37 A

Inv. diode direct current, pulsedISM

Inverse diode forward voltage VSD

Reverse recovery time

trr

Reverse recovery charge

Qrr

VGS=0, IF = IS

VR=50V, IF=lS,

diF/dt=100A/µs

-

- 1.48

-

0.9 1.2 V

- 52.7 79 ns

- 17.8 27 nC

Page 3

2003-02-26

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