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零件编号
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Q67000-S306 查看數據表(PDF) - Infineon Technologies
零件编号
产品描述 (功能)
生产厂家
Q67000-S306
SIPMOS® Small-Signal-Transistor
Infineon Technologies
Q67000-S306 Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
Rev. 1.0
BSP123
13 Typ. gate charge
V
GS
=
f
(
Q
G
); parameter:
V
DS
,
I
D
= 0.37 A pulsed,
T
j
= 25 °C
BSP123
16
V
14 Drain-source breakdown voltage
V
(BR)DSS
=
f
(
T
j
)
BSP123
120
V
12
10
8
0.2
V
DS max
0.5
V
DS max
6
0.8
V
DS max
4
2
0
0 0.4 0.8 1.2 1.6 2
nC
2.8
Q
G
114
112
110
108
106
104
102
100
98
96
94
92
90
-60 -20
20
60 100
°C
180
T
j
Page 7
2003-02-26
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