MTP10N10E 查看數據表（PDF） - ON Semiconductor

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MTP10N10E

Power MOSFET 10 Amps, 100 Volts

ON Semiconductor 

MTP10N10E

Preferred Device

Power MOSFET

10 Amps, 100 Volts

N–Channel TO–220

This Power MOSFET is designed to withstand high energy in the

avalanche and commutation modes. The energy efficient design also

offers drain–to–source diodes with fast recovery times. Designed for

low voltage, high speed switching applications in power supplies,

converters and PWM motor controls, these devices are particularly

well suited for bridge circuits where diode speed and commutating

safe operating area are critical, and offer additional safety margin

against unexpected voltage transients.

• Internal Source–to–Drain Diode Designed to Replace External Zener

Transient Suppressor – Absorbs High Energy in the Avalanche Mode

– Unclamped Inductive Switching (UIS) Energy Capability Specified

at 100°C

• Commutating Safe Operating Area (CSOA) Specified for Use in Half

and Full Bridge Circuits

• Source–to–Drain Diode Recovery Time Comparable to a Discrete

Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating

Symbol Value

Drain–Source Voltage

Drain–Gate Voltage (RGS = 1.0 MΩ)

Gate–Source Voltage

Drain Current – Continuous

Drain Current – Pulsed

VDSS

100

VDGR

100

VGS

±20

ID

10

IDM

25

Total Power Dissipation

Derate above 25°C

PD

75

0.6

Operating and Storage Temperature

Range

TJ, Tstg –65 to

150

Thermal Resistance

– Junction to Case

– Junction to Ambient°

RθJC

1.67

RθJA

62.5

Maximum Lead Temperature for Soldering

TL

275

Purposes, 1/8″ from case for 5 seconds

Unit

Vdc

Vdc

Vdc

Adc

Watts

W/°C

°C

°C/W

°C

http://onsemi.com

10 AMPERES

100 VOLTS

RDS(on) = 250 mΩ

N–Channel

D

G

S

MARKING DIAGRAM

& PIN ASSIGNMENT

4

4

Drain

1

2

3

TO–220AB

CASE 221A

STYLE 5

MTP10N10E

LLYWW

1

Gate

3

Source

2

Drain

MTP10N10E

LL

Y

WW

= Device Code

= Location Code

= Year

= Work Week

ORDERING INFORMATION

Device

Package

Shipping

MTP10N10E

TO–220AB

50 Units/Rail

Preferred devices are recommended choices for future use

and best overall value.

© Semiconductor Components Industries, LLC, 2000

1

November, 2000 – Rev. 1

Publication Order Number:

MTP10N10E/D

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