MTP10N10E 查看數據表（PDF） - ON Semiconductor
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MTP10N10E Datasheet PDF : 8 Pages
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1250
Ciss
1000
750
MTP10N10E
10
TJ = 25°C
8
Coss
6
500
Ciss
4
250
Coss
2
0
20
10
0
10
VGS VDS
Crss
0
20
30
0
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 16. Capacitance Variation
VDS = 30 V
50 V
TJ = 25°C
80 V
ID = RATED ID
4
8
12
16
20
QG, TOTAL GATE CHARGE (nC)
Figure 17. Gate Charge versus
Gate–To–Source Voltage
+18 V
47 k
Vin
15 V
100 k
2N3904
47 k
1 mA
2N3904
VDD
10 V 100 k
0.1 µF
SAME
DEVICE TYPE
AS DUT
FERRITE
100
BEAD
DUT
Vin = 15 Vpk; PULSE WIDTH ≤ 100 µs, DUTY CYCLE ≤ 10%
Figure 18. Gate Charge Test Circuit
http://onsemi.com
7
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