MCR100-8 查看數據表（PDF） - Shenzhen Winsemi Microelectronics Co., Ltd
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MCR100-8 Datasheet PDF : 5 Pages
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MCR100-8
Electrical Characteristics (TJ = 25°C, RGK = 1 kΩ unless otherwise specified)
Symbol
Characteristics
IDRM/IRRM
off-state leakage current
(VAK= VDRM/VRRM)
VTM
Forward “On” voltage (ITM = 1A tp = 380μs)
Gate trigger current (continuous dc)
IGT
(VAK = 7 Vdc, RL = 100 Ω)
Gate Trigger Voltage (Continuous dc)
VGT
(VAK = 7 Vdc, RL = 100 Ω)
Min
Tc=25℃
-
Tc=125℃
(Note2.1) -
(Note2.2)
15
(Note2.2)
-
Typ.
-
1.2
-
-
Max
1
100
1.7
200
0.8
Unit
μA
V
μA
V
VGD
Gate threshold Voltage
(Note2.1) 0.2
-
-
V
dv/dt
IH
Voltage Rate of Rise Off-State Voltage
(VD=0.67VDRM ;exponential waveform)
Holding Current (VD = 12 V; IGT = 0.5 mA)
TJ=125℃
500 800
Gate open circuit
25
-
2
-
V/μs
5
mA
IL
latching current (VD = 12 V; IGT = 0.5 mA)
-
2
6
mA
Rd
Dynamic resistance
TJ=125℃
-
-
245 mΩ
Note 2.1 Pulse width≤1.0ms,duty cycle≤1%
2.2 RGK current is not included in measurement.
2/5
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