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6MBP50RA120 查看數據表(PDF) - Fuji Electric

零件编号
产品描述 (功能)
生产厂家
6MBP50RA120
Fuji
Fuji Electric Fuji
6MBP50RA120 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
6MBP50RA120
IGBT-IPM
Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)
Item
Symbol
Power supply current of P-line side Pre-driver(one unit) Iccp
Power supply current of N-line side three Pre-driver ICCN
Input signal threshold voltage (on/off)
Vin(th)
Condition
fsw=0 to 15kHz Tc=-20 to 100°C *7
fsw=0 to 15kHz Tc=-20 to 100°C *7
ON
OFF
Input zener voltage
Over heating protection temperature level
Hysteresis
IGBT chips over heating protection temperature level
Hysteresis
Collector current protection level
INV
Over current protection delay time
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Limiting resistor for alarm
VZ
TCOH
TCH
TjOH
TjH
IOC
tDOC
VUV
VH
tALM
tSC
RALM
Rin=20k ohm
VDC=0V, Ic=0A, Case temperature
surface of IGBT chips
Tj=125°C
Tj=25°C Fig.2
Tj=25°C Fig.3
*7 Switching frequency of IPM
Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)
Item
Symbol Condition
Switching time (IGBT)
ton
IC=50A, VDC=600V
toff
Switching time (FWD)
trr
IF=50A, VDC=600V
Min. Typ. Max. Unit
3
-
18 mA
10
-
65 mA
1.00 1.35 1.70 V
1.25 1.60 1.95 V
-
8.0 -
V
110
-
125 °C
-
20
-
°C
150
-
-
°C
-
20
-
°C
75
-
-
A
-
10
-
µs
11.0 -
12.5 V
0.2 -
-
V
1.5
2
-
ms
-
-
12 µs
1425 1500 1575 ohm
Min.
0.3
-
-
Typ.
-
-
-
Max. Unit
-
µs
3.6 µs
0.4 µs
Thermal characteristics(Tc=25°C)
Item
Junction to Case thermal resistance
INV
Case to fin thermal resistance with compound
Recommendable value
Item
DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque
Mounting (M5)
Terminal (M5)
IGBT
FWD
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)
Symbol
VDC
VCC
fSW
-
-
Min.
200
13.5
1
2.5
2.5
Typ.
-
-
0.05
Typ.
-
15
-
-
-
Max.
0.35
0.85
-
Unit
°C/W
°C/W
°C/W
Max.
800
16.5
20
3.0
3.0
Unit
V
V
kHz
N·m
N·m

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