MTW14N50E 查看數據表（PDF） - ON Semiconductor

零件编号

产品描述 (功能)

生产厂家

MTW14N50E

Power MOSFET 14 Amps, 500 Volts N–Channel TO–247

ON Semiconductor 

MTW14N50E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 V, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

500

–

Zero Gate Voltage Drain Current

(VDS = 500 Vdc, VGS = 0)

(VDS = 500 Vdc, VGS = 0, TJ = 125°C)

Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0)

IDSS

–

–

IGSS

–

ON CHARACTERISTICS (Note 1.)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

VGS(th)

2.0

–

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 7.0 Adc)

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 14 Adc)

(ID = 7.0 Adc, TJ = 125°C)

Forward Transconductance (VDS = 15 Vdc, ID = 7.0 Adc)

RDS(on)

–

VDS(on)

–

–

gFS

5.0

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0,

f = 1.0 MHz)

Ciss

–

Coss

–

Crss

–

SWITCHING CHARACTERISTICS (Notes 1. & 2.)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 250 Vdc, ID = 14 Adc,

VGS = 10 Vdc,

RG = 4.7 Ω)

Gate Charge

(VDS = 400 Vdc, ID = 14 Adc,

VGS = 10 Vdc)

td(on)

–

tr

–

td(off)

–

tf

–

QT

–

Q1

–

Q2

–

Q3

–

SOURCE–DRAIN DIODE CHARACTERISTICS (Note 1.)

Forward On–Voltage

(IS = 14 Adc, VGS = 0)

VSD

–

(IS = 14 Adc, VGS = 0, TJ = 125°C)

–

Reverse Recovery Time

trr

–

(IS = 14 Adc, VGS = 0,

dIS/dt = 100 A/µs, VGS = 0)

ta

–

tb

–

Reverse Recovery Stored Charge

QRR

–

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

LD

–

Internal Source Inductance

LS

–

(Measured from the source lead 0.25″ from package to source bond pad)

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

Typ

Max

Unit

–

–

Vdc

520

–

mV/°C

µAdc

–

250

–

1000

–

100

nAdc

3.2

4.0

Vdc

7.0

–

mV/°C

0.32

0.40

Ohm

Vdc

–

6.7

–

5.6

–

–

mhos

2510

3510

pF

280

392

67

94

28

60

ns

80

160

80

160

60

120

65

85

nC

17

–

47

–

34

–

1.0

1.6

Vdc

0.9

–

390

–

ns

245

–

145

–

5.35

–

µC

5.0

–

nH

13

–

nH

http://onsemi.com

2

Share Link: