SBP13009-S 查看數據表（PDF） - Shenzhen Winsemi Microelectronics Co., Ltd
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产品描述 (功能)
生产厂家
SBP13009-S
Shenzhen Winsemi Microelectronics Co., Ltd
SBP13009-S Datasheet PDF : 5 Pages
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SBP13009-S
Electrical Characteristics(Tc=25℃ unless otherwise noted)
Symbol
Parameter
Test Conditions
VCEO(sus)
VCE(sat)
VBE(sat)
ICBO
hFE
ts
tf
Collector-Emitter Breakdown Voltage
Collector -Emitter Saturation Voltage
Base -Emitter Saturation Voltage
Collector -Base Cutoff Current
(Vbe=-1.5V)
DC Current Gain
Resistive Load
Storage time
Fall Time
Ic=10mA,Ib=0
Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=1.6A
Ic=12A,Ib=3.0A
Ic=8.0A,Ib=1.6A
Tc=100℃
Ic=5.0A,Ib=1.0A
Ic=8.0A,Ib=1.6A
Ic=8.0A,Ib=1.6A
Tc=100℃
Vcb=700V
Vcb=700V,Tc=100℃
Vce=5V,Ic=5.0A
Vce=5V,Ic=8.0A
VCC=125V,Ic=6.0A
IB1=1.6A,IB2=-1.6A
TP=25µs
Value
Min Typ Max
400
-
-
0.5
-
-
1.0
1.5
2.0
-
-
Units
V
V
V
1.2
-
-
V
1.6
-
-
1.5
V
1.0
-
-
mA
5.0
10
-
40
6
-
40
-
1.5 3.0
µs
0.17 0.4
Inductive Load
ts
Storage Time
tf
Fall Time
VCC=15V,Ic=5A
-
0.8 2.0
IB1=1.6A,Vbe(off)=5V
µs
L=0.35mH,Vclamp=300 - 0.04 0.1
V
Inductive Load
ts
Storage Time
tf
Fall Time
VCC=15V,Ic=1A
-
0.8 2.5
IB1=0.4A,Vbe(off)=5V
µs
L=0.2mH,Vclamp=300V - 0.05 0.15
Tc=100℃
Note:
Pulse Test : Pulse Width300,Duty cycle 2%
2/5
Steady, all for your advance
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