C13003 查看數據表（PDF） - Rectron Semiconductor
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C13003 Datasheet PDF : 4 Pages
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TO126 PLASTIC PACKAGE
NPN SILICON POWER TRANSISTOR
Suitable for Lighting, Switching Regulator and Motor Control
C13003
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter (sus) Voltage
Emitter Base Voltage
Collector Current Continuous
Peak (1)
Base Current Continuous
Peak (1)
Emitter Current Continuous
Peak (1)
Power Dissipation @ Ta=25 ºC
Derate Above 25ºC
Power Dissipation @ Tc=25 ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
PD
Tj, Tstg
VALUE
600
400
9.0
1.5
3.0
0.75
1.5
2.25
4.5
1.4
11.2
40
320
- 65 to+150
UNIT
V
V
V
A
A
A
A
A
A
W
mW/ ºC
W
mW/ ºC
ºC
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering
Purpose: 1/8" from Case for 5 Seconds
Rth (j-c)
Rth (j-a)
TL
3.12
89
275
ºC/W
ºC/W
ºC
(1) Pulse Test: Pulse Width=5ms, Duty Cycle=10%
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Base Voltage
VCBO
IC=1mA, IE=0
Collector Emitter (sus) Voltage
*VCEO(sus)
IC=10mA, IB=0
Collector Cut Off Current
ICBO
VCB=600V, IE=0
Emitter Cut Off Current
VCB=600V, IE=0, Tc=100ºC
IEBO
VEB=9V, IC=0
*Pulse Test: PW=300ms, Duty Cycle=2%
MIN TYP MAX
600
400
1.0
5.0
1.0
UNIT
V
V
mA
mA
mA
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