BR93LC46 查看數據表（PDF） - ROHM Semiconductor

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BR93LC46

1,024-Bit Serial Electrically Erasable PROM

ROHM Semiconductor 

Memory ICs

1,024-Bit Serial Electrically Erasable PROM

BR93LC46 / BR93LC46F / BR93LC46RF / BR93LC46FV

•Features

• Low power CMOS Technology

• 64 × 16bit configuration

• 2.7V to 5.5V operation

• Low power dissipation

– 3mA (max.) active current: 5V

– 5µA (max.) standby current: 5V

• Auto increment for efficient data dump

• Automatic erase-before-write

• Hardware and software write protection

– Default to write-disabled state at power up

– Software instructions for write-enable / disable

– Vcc lockout inadvertent write protection

• 8-pin SOP / 8-pin SSOP-B / 8-pin DIP packages

• Device status signal during write cycle

• TTL-compatible Input / Output

• 100,000 ERASE / write cycles

• 10 years Data Retention

•Pin assignments

CS 1

8 VCC

N.C. 1

8 N.C.

SK 2

DI 3

BR93LC46 /

BR93LC46RF

7 N.C.

6 N.C.

VCC 2

CS 3

7 GND

BR93LC46F /

BR93LC46FV 6 DO

DO 4

5 GND

SK 4

5 DI

•Pin descriptions

Pin

name

Function

CS

SK

DI

DO

GND

N.C.

N.C.

VCC

Chip select input

Serial clock input

Start bit, operating code, address, and seria

data input

Serial data output, READY / BUSY internal

status display output

Ground

Not connected

Not connected

Power supply

•Overview

The BR93LC46 series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed

electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed individually and

data read from it and written to it. Operation control is performed using five types of commands. The commands,

addresses, and data are input through the DI pin under the control of the CS and SK pins. In a write operation, the

internal status signal (READY or BUSY) can be output from the DO pin.

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