SBL3030PT 查看數據表（PDF） - Vishay Semiconductors
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SBL3030PT Datasheet PDF : 4 Pages
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SBL3030PT–SBL3060PT
Vishay Lite–On Power Semiconductor
30A Schottky Barrier Rectifier
Features
D Schottky barrier chip
D Guard ring die constuction for transient
protection
D Low power loss, high efficiency
D High current capability and low forward voltage
drop
D High surge capability
D For use in low voltage, high frequency inverters,
14 414
free wheeling, and polarity protection
application
D Plastic material – UL Recognition flammability
classification 94V–0
Absolute Maximum Ratings
Tj = 25_C
Parameter
Repetitive peak reverse voltage
=Working peak reverse voltage
=DC Blocking voltage
Test
Conditions
Peak forward surge current
Average forward current
Junction and storage temperature range
TC=95°C
Type
Symbol Value Unit
SBL3030PT VRRM
30
V
SBL3035PT =VRWM
35
V
SBL3040PT =VR
40
V
SBL3045PT
45
V
SBL3050PT
50
V
SBL3060PT
60
V
IFSM
275
A
IFAV
30
A
Tj=Tstg –65...+150 °C
Electrical Characteristics
Tj = 25_C
Parameter
Test
Conditions
Type
Symbol Min Typ Max Unit
Forward voltage IF=15A, TC=25°C
Reverse current
Diode capacitance
Thermal resistance
junction to case
TC=25°C
TC=100°C
VR=4V, f=1MHz
TL=const.
SBL3030PT–SBL3045PT
SBL3050PT–SBL3060PT
VF
VF
IR
IR
CD
RthJC
0.55 V
0.70 V
1.0 mA
75 mA
1100
pF
2.0
K/W
Rev. A2, 24-Jun-98
1 (4)
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