16N50G-TF3-T 查看數據表（PDF） - Unisonic Technologies

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16N50G-TF3-T

16 Amps, 500 Volts N-CHANNEL POWER MOSFET

Unisonic Technologies 

16N50

Preliminary

Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

500

V

Gate-Source Voltage

VGSS

±30

V

Drain Current

Continuous (TC=25°C)

Pulsed (Note 3)

Avalanche Current (Note 3)

Avalanche Energy

Single Pulsed (Note 4)

Repetitive (Note 5)

Peak Diode Recovery dv/dt (Note 5)

ID

IDM

IAR

EAS

EAR

dv/dt

16 (Note 2)

64 (Note 2)

16

780

20

4.5

A

A

A

mJ

mJ

V/ns

Power Dissipation

TC=25°C

Derate above 25°C

PD

52

W

0.41

W/°C

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Drain current limited by maximum junction temperature

3. Repetitive Rating: Pulse width limited by maximum junction temperature

4. L = 5.5mH, IAS = 16A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

5. ISD ≤ 16A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

„ THERMAL DATA

PARAMETER

Junction to Ambient

Junction to Case

SYMBOL

θJA

θJC

RATINGS

62.5

2.4

UNIT

°C/W

°C/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-532.a

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