C5546 查看數據表（PDF） - Panasonic Corporation
零件编号
产品描述 (功能)
生产厂家
C5546 Datasheet PDF : 2 Pages
| |||
Power Transistors
2SC5546
Silicon NPN triple diffusion mesa type
For horizontal deflection output
■ Features
• High breakdown voltage, and high reliability through the use of a
glass passivation layer
• High-speed switching
• Wide safe operation area
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
1 700
V
Collector-emitter voltage (E-B short) VCES
1 700
V
Collector-emitter voltage (Base open) VCEO
600
V
Emitter-base voltage (Collector open) VEBO
7
V
Base current
IB
8
A
Collector current
IC
18
A
Peak collector current *
ICP
30
A
Collector power dissipation
PC
70
W
Ta = 25°C
3.5
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
Note) *: Non-repetitive peak collector current
Unit: mm
15.5±0.5 φ 3.2±0.1
5˚
3.0±0.3
5˚
5˚
(4.0)
5˚
2.0±0.2
5˚
1.1±0.1
0.7±0.1
5.45±0.3
10.9±0.5
5˚
12 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-94
TOP-3E-A1 Package
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Storage time
Fall time
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
VCB = 1 000 V, IE = 0
VCB = 1 700 V, IE = 0
VEB = 7 V, IC = 0
VCE = 5 V, IC = 10 A
IC = 10 A, IB = 2.5 A
IC = 10 A, IB = 2.5 A
VCE = 10 V, IC = 0.1 A, f = 0.5 MHz
IC = 10 A, Resistance loaded
IB1 = 2.5 A, IB2 = −5.0 A
50
µA
1
mA
50
µA
6
12
3
V
1.5
V
3
MHz
3.0
µs
0.2
µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
SJD00157BED
1
Share Link: 