1MBH50D-060S 查看數據表（PDF） - Fuji Electric
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1MBH50D-060S Datasheet PDF : 5 Pages
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1MBH50D-060S
Molded IGBT
600V / 50A Molded Package
Features
· Small molded package
· Low power loss
· Soft switching with low switching surge and noise
· High reliability, high ruggedness (RBSOA, SCSOA etc.)
· Comprehensive line-up
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C)
Item
Symbol
Rating
Collector-Emitter voltage
VCES
600
Gate-Emitter voltaga
VGES
±20
Collector DC
Tc=25°C
IC25
75
current
Tc=100°C IC100
50
1ms
Tc=25°C
Icp
150
Max. power dissipation (IGBT)
PC
230
Max. power dissipation (FWD)
PC
150
Operating temperature
Tj
+150
Storage temperature
Tstg
-40 to +150
Screw torque
-
58.8 to 78.4
Unit
V
V
A
A
A
W
W
°C
°C
N·cm
Equivalent Circuit Schematic
IGBT + FWD
C:Collector
G:Gate
E:Emitter
Electrical characteristics (at Tc=25°C unless otherwise specified)
Item
Symbol
Characteristics
Min.
Typ.
Max.
Zero gate voltage collector current ICES
–
–
1.0
Gate-Emitter leakage current
IGES
–
–
10
Gate-Emitter threshold voltage
VGE(th)
4.0
5.0
6.0
Collector-Emitter saturation voltage VCE(sat)
–
2.4
2.9
Input capacitance
Cies
–
2500
–
Output capacitance
Coes
–
240
–
Reverse transfer capacitance
Cres
–
130
–
Turn-on time
ton *
–
0.15 –
tr *
–
0.09 –
trr2
–
0.03 –
Turn-off time
toff
–
0.50 0.62
Switching
tf
–
0.10 0.17
Time
Turn-on time
ton *
–
0.15 –
tr *
–
0.09 –
trr2
–
0.03 –
Turn-off time
toff
–
0.50 0.62
tf
–
0.10 0.17
FWD forward on voltage
VF
–
2.0
2.5
Reverse recovery time
trr
–
0.06 0.10
*Turn-on characteristics include trr2. See a figure in next page.
Thermal resistance characteristics
Item
Symbol
Thermal resistance
Rth(j-c)
Rth(j-c)
Characteristics
Min.
Typ.
–
–
–
–
Max.
0.54
0.83
Conditions
VGE=0V, VCE=600V
VCE=0V, VGE=±20V
VCE=20V, IC=50mA
VGE=15V, IC=50A
VGE=0V
VCE=25V
f=1MHz
VCC=300V, IC=50A
VGE=±15V
RG=33 ohm
(Half Bridge)
Inductance Load
VCC=300V, IC=50A
VGE=+15V
RG=8 ohm
(Half Bridge)
Inductance Load
IF=50A, VGE=0V
IF=50A, VGE=-10V,
VR=300V, di/dt=100A/µs
Conditions
IGBT
FWD
Unit
mA
µA
V
V
pF
µs
µs
V
µs
Unit
°C/W
°C/W
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