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零件编号
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BD434 查看數據表(PDF) - Comset Semiconductors
零件编号
产品描述 (功能)
生产厂家
BD434
SILICON PNP POWER TRANSISTORS.
Comset Semiconductors
BD434 Datasheet PDF : 3 Pages
1
2
3
BD434 – BD436 – BD438
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
I
CBO
Collector cut-off
current
I
CES
Collector cut-off
current
I
E
= 0, V
CB
= -22 V
I
E
= 0, V
CB
= -32 V
I
E
= 0, V
CB
= -45 V
V
BE
= 0, V
CE
= -22 V
V
BE
= 0, V
CE
= -32 V
V
BE
= 0, V
CE
= -45 V
I
EBO
Emitter cut-offcurrent
I
C
= 0
V
EB
= -5 V
V
CEO(SUS)
Collector-Emitter
sustaning Voltage (*)
I
B
= 0
I
C
= -100 mA
V
CE(SAT)
Collector-Emitter
I
C
= -2 A
saturation Voltage (*) I
B
= -200 mA
V
BE
Base-Emitter
Voltage(*)
I
C
= -2 A
V
CE
= -1 V
I
C
= -10 mA
V
CE
= -5 V
h
FE
DC Current Gain (*)
I
C
= -500 mA
V
CE
= -1 V
I
C
= -2 A
V
CE
= -1 V
f
T
Transition frequency
I
C
= -250 mA
V
CE
= -1 V
1.
Measured under pulse conditions :
t
P
<300µs,
δ
<1.5
BD434
BD436
BD438
BD434
BD436
BD438
BD434
BD436
BD438
BD434
BD436
BD438
BD434
BD436
BD438
BD434
BD436
BD438
BD434
BD436
BD438
BD434
BD436
BD438
BD434
BD436
BD438
BD434
BD436
BD438
Min Typ Max Unit
-
- -100
µA
-
- -100
-
-
-1 mA
-22 -
-
-32 -
-
V
-45 -
-
-
- -0.5
V
-0.6
-
- -1.1
V
-1.2
40 - 130
30 - 130
85 - 140 -
50 -
40 -
3
-
-
-
- MHz
25/09/2012
COMSET SEMICONDUCTORS
2|3
27/08/2012
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