BUP 603D
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, RG = 33 Ω
10 3
tf
t
ns
tdoff
tr
10 2
tdon
Typ. switching time
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, IC = 30 A
10 3
tf
tdoff
t
ns
tr
10 2
tdon
10 1
0
10 20 30 40 50 60
A 80
IC
10 1
0
20
40
60
80
Ω
120
RG
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, RG = 33 Ω
10
mWs
E
8
7
6
Eoff
5
4
Eon
3
2
1
0
0 10 20 30 40 50 60 A 80
IC
Typ. switching losses
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 300V, VGE = ± 15 V, IC = 30 A
5.0
mWs
E 4.0
3.5
3.0
2.5
Eoff
Eon
2.0
1.5
1.0
0.5
0.0
0
20
40
60
80
Ω
120
RG
Semiconductor Group
6
Dec-02-1996