TGF4250 查看數據表（PDF） - TriQuint Semiconductor
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TGF4250 Datasheet PDF : 9 Pages
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DC - 10.5 GHz Discrete HFET
Product Data Sheet
December 16, 2002
TGF4250-SCC
Key Features and Performance
• Nominal Pout of 34 dBm at 8.5 GHz
• Nominal Gain of 8.5 dB at 8.5 GHz
• Nominal PAE of 53% at 8.5 GHz
• Suitable for high reliability applications
• 4800 µm x 0.5 µm FET
• Chip dimensions: 0.61 x 1.37 x 0.1 mm
(0.024 x 0.054 x 0.004 in)
• Bias at 8 Volts, 384 mA
Primary Applications
• Cellular Base Stations
• High-reliability space
• Military
Description
The TriQuint TGF4250-SCC is a single gate 4.8 mm discrete GaAs Heterostructure
Field Effect Transistor (HFET) designed for high efficiency power applications up to
10.5 GHz in Class A and Class AB operation. Typical performance at 2 GHz is 34
dBm power output, 13 dB gain, and 53% PAE.
Bond pad and backside metallization is gold plated for compatibility with eutectic
alloy attach methods as well as thermocompression and thermosonic wire bonding
processes. The TGF4250-SCC is readily assembled using automatic equipment.
For an Application Note on the use of HFETs, refer to the TriQuint website for the
Millimeter Wave Division.
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
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