TGF4250-SCC 查看數據表（PDF） - TriQuint Semiconductor

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TGF4250-SCC

DC - 10.5 GHz Discrete HFET

TriQuint Semiconductor 

Product Data Sheet

December 16, 2002

TGF4250-SCC

TABLE II

DC PROBE CHARACTERISTICS

(TA = 25 °C, Nominal)

Symbol

Parameter

Minimum Typical Maximum Unit Note

IDSS Saturated Drain Current

--

GM

Transconductance

--

VP

Pinch-off Voltage

1

VBGS

Breakdown Voltage

17

Gate-Source

VBGD

Breakdown Voltage

17

Gate-Drain

1176

792

1.85

22

22

--

mA

1/

--

mS

1/

3

V

2/

30

V

2/

30

V

2/

1/ Total for Four FETS

2/ VP, VBGS, and VBGD are negative.

S ym bol

Pout

Gp

PAE

TABLE III

ELECTRICAL CHARACTERISTICS

(TA = 25 °C, Nom inal)

Bias Conditions: Vd = 8V, Id = 200m A +/- 10%

P aram eter

Output Power

Power G ain

Power Added Efficiency

Typical

34

8.5

53

U n it

dBm

dB

%

Note: The recommended bias current for HFETs is 80 mA/mm. For this

4.8 mm HFET IQ is 384 mA.

TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com

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