2SC3039 查看數據表（PDF） - Inchange Semiconductor
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2SC3039 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3039
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞
400
V
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
500
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
7
V
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A
1.0
V
VBEsat Base-emitter saturation voltage
IC=4A; IB=0.8A
1.5
V
ICBO
Collector cut-off current
VCB=400V ;IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=0.8A ; VCE=5V
15
50
hFE-2
DC current gain
固IN电C半H导AN体GE SEMICONDUCTOR fT
Transition frequency
Cob
Collector output capacitance
Switching times
ton
Turn-on time
IC=4A ; VCE=5V
IC=0.8A ; VCE=10V
f=1MHz ; VCB=10V
IC=5A, IB1=1A
8
20
80
MHz
pF
1.0
μs
ts
Storage time
IB2=-1A; VCC=200V
2.5
μs
RL=40Ω
tf
Fall time
1.0
μs
hFE-1 classifications
L
M
N
15-30
20-40
30-50
2
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