2SK3541M3T5 查看數據表（PDF） - Willas Electronic Corp.
零件编号
产品描述 (功能)
生产厂家
2SK3541M3T5 Datasheet PDF : 4 Pages
| |||
WILLAS
FM120-M+
6.0TH7RU
1S.0OA STU-R7F2A3CEPMlOaUsNtTiScC-HEOnTTcKaYpBsARuRlIaERteREMCTOIFISERFSE-2T0VS- 200V
FM1200-M+
Features
SOD-123+ PACKAGE
Typical CharaPcactkeagreiosuttliince s
Pb Free Product
• Batch process design, excellent power dissipation offers
better reverse leakOaugtpeuctuCrhreanratcatenrdistthicesrmal resistance.
•
Lo0.w20 profile surf
optimiTzae=2b5℃oard
a
s
ce4m.0Vo
pace.
u
n
t
e
d
application
in
order to
VGS=3.0V
200
•
Low
poPuwlseedr
loss,
3.5V
high efficiency.
100
• High current capability, low forward voltage drop.
TransSfeOr DC-h1a2r3aHcteristics
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• Hi0g.1h5 surge capability.
30
• Guardring for overvoltage protection.
• Ultra high-speed switching.
•
•
Silicon
0.10
epitaxial
planar
chip,
metal
silicon
junctioVnGS.=2.5V
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mec0.05 hanical data
VGS=2.0V
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
VGS=1.5V
0.00
,
• Term0inals :Plat1ed termina2 ls, solder3able per M4 IL-STD-7550
MetDhRoAdIN2T0O2S6OURCE VOLTAGE VDS (V)
10
0.071(1.8)
0.056(1.4)
3
1
0.3
0.031(0.8) Typ.
0.1
0
1
2
GATE TO SOURCE VOLTAGE
0.040(1.0)VDS=3V
0.024(0.6)Ta=25℃
Pulsed
0.031(0.8) Typ.
3
4
VGS (V)
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : AnRyDS(ON) —— ID
• We6i0ght : Approximated 0.011 gram
15
Ta=25℃
PMulsAedXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RDS(ON) —— VGS
Ta=25℃
Pulsed
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitiv40e load, derate current by 20%
10
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
12
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
Maximum RM2S0 Voltage
VRRM
20
30
40
50
60 ID=100m8A0
100
150
200 Volts
VRMS
14
21
285
35
42
56
70
105
140 Volts
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
VDC
VGS=2.5V IO
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed o0n1 rated load (J3EDEC metho1d0)
30
IFSM
Typical Thermal Resistance (NoteDR2A)IN CURRENT ID (mA)RΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
20
30
40
VGS=4V
0
100
200
0
-55 to +125
50
60
80
100
150
200
ID=50mA 1.0
30
5
10
15
20
GATE TO S4O0URCE VOLTAGE VGS (V)
120
-55 to +150
Volts
Amps
Amps
℃/W
PF
℃
Storage Temperature Range
IS —— VSD
200
VGS=C0VHARACTERISTICS
Maximum Fo1r0w0arPTdau=lVs2e5od℃ltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blo3c0king Voltage
@T A=125℃
TSTG
- 65 to +175
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50
0.70
0.85
0.9
0.92 Volts
IR
0.5
mAmps
10
NOTES:
10
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resi3stance From Junction to Ambient
1
0.3
0.1
2012-060.2
0.4
0.6
0.8
1.0
SOURCE TO DRAIN VOLTAGE VSD (V)
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
Share Link: 