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BAT54SWT1 Datasheet PDF : 4 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by BAT54SWT1/D
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc
BAT54SWT1
Motorola Preferred Device
30 VOLT
DUAL SERIES
SCHOTTKY BARRIER
DIODES
1
ANODE
2
CATHODE
3
CATHODE/ANODE
3
1
2
CASE 419 – 02, STYLE 9
SOT– 323 (SC – 70)
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VR
30
Volts
PF
200
mW
1.6
mW/°C
Forward Current (DC)
Junction Temperature
Storage Temperature Range
DEVICE MARKING
IF
200 Max
mA
TJ
125 Max
°C
Tstg
– 55 to +150
°C
BAT54SWT1 = B8
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage (IR = 10 µA)
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 25 V)
Forward Voltage (IF = 0.1 mAdc)
Forward Voltage (IF = 30 mAdc)
Forward Voltage (IF = 100 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
V(BR)R
30
CT
—
IR
—
VF
—
VF
—
VF
—
trr
—
—
—
Volts
7.6
10
pF
0.5
2.0
µAdc
0.22
0.24
Vdc
0.41
0.5
Vdc
0.52
1.0
Vdc
—
5.0
ns
Forward Voltage (IF = 1.0 mAdc)
Forward Voltage (IF = 10 mAdc)
Forward Current (DC)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current (t < 1.0 s)
VF
—
0.29
0.32
Vdc
VF
—
0.35
0.40
Vdc
IF
—
—
200
mAdc
IFRM
—
—
300
mAdc
IFSM
—
—
600
mAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a registered trademark of the Bergquist Company.
REV 3
©MMoottoorroolal,aInSc.m19a9ll7–Signal Transistors, FETs and Diodes Device Data
5–1
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