JCS10N60FT-O-F-N-B 查看數據表（PDF） - Jilin Sino-Microelectronics
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JCS10N60FT-O-F-N-B Datasheet PDF : 10 Pages
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特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS10N60T
On-Region Characteristics
VGS
Top 15V
10V
9V
8V
7V
10
6.5V
6V
5.5V
Bottom 5V
Notes:
1
1. 250μs pulse test
2. TC=25℃
1
10
VDS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
1.00
0.95
0.90
VGS=10V
0.85
0.80
0.75
0.70
VGS=20V
0.65
Note :Tj=25 ℃
0.60
0
2
4
6
8
10
12
14
16
18
ID [A]
Capacitance Characteristics
Transfer Characteristics
10
150℃
1
25℃
Notes:
1.250μs pulse test
2.VDS=40V
0.1
2
4
6
8
10
VGS [V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
10
150 ℃
1
25 ℃
Notes:
1. 250μs pulse test
2. VGS=0V
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VSD [V]
Gate Charge Characteristics
3x103
2x103
1x103
0
10-1
12
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
10
Crss=Cgd
8
VDS=480V
VDS=300V
VDS=120V
6
4
2
100
101
V DS Drain-Source Voltage [V]
0
0
10
20
30
40
Qg Toltal Gate Charge [nC]
版本：201010C
5/10
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