Product Specification
SL1 ICS31 01
6 Mechanical Die Specifications
Rev. 1.2
Designation:
VCOL1V0
visible on each die
location see attached die plan
Bond pad location:
see attached die plan
Bond pad size:
Test pad size:
LA, LB
TEST, VSS
130 µm x 150 µm
90 µm x 90 µm (the test pads are electrically neutral
at sawn wafers)
Bond pad metallisation material:
AlSiCu
Metallisation thickness:
1.4 µm
Die dimensions (incl. 80 µm scribe line): 1460 µm x 1490 µm
Die dimensions (excl. scribe line):
1380 µm x 1410 µm
Tolerances for sawn dies:
± 25 µm
Pin identification:
see attached die plan
Passivation attributes:
The passivation is a protection of active areas against dust (particles) and humidity and general
contamination (whole surface of the chip except for the bond pads).
Top side passivation material:
Passivation thickness:
Oxynitride
1.6 µm
Due to the glass-like physical properties careful handling and processing is required.
July 2000
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