T35L6432B 查看數據表（PDF） - Taiwan Memory Technology

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T35L6432B

64K x 32 SRAM

Taiwan Memory Technology 

tm TE

CH

T35L6432B

CAPACITANCE

DESCRIPTION

CONDITIONS

SYM. TYP MAX UNITS NOTES

Input Capacitance

Input/ Output

Capacitance(DQ)

TA = 25°C; f = 1 MHz CI

3

4

pF

4

VCC = 3.3V

CO

6

7

pF

4

THERMAL CONSIDERATION

DESCRIPTION

Thermal Resistance - Junction to

Ambient

Thermal Resistance - Junction to Case

CONDITIONS

Still air, soldered on

4.25x1.125 inch 4-layer

PCB

SYM. QFP TYP UNITS

ΘJA 20

°C/W

ΘJB

1

°C/W

NOTES

AC TEST CONDITIONS

Input pulse levels

Input rise and fall times

Input timing reference levels

Output reference levels

Output load

0V to 3.0V

1.5ns

1.5V

1.5V

See Figures 1 and

2

Notes:

1. All voltages referenced to VSS (GND).

2. Overshoot: VIH ≤ +3.6 V for t ≤ tKC/2.

Undershoot: VIL ≤ -1.0 V for t ≤ tKC/2.

3. Icc is given with no output current. Icc increases with

greater output loading and faster cycle times.

4. This parameter is sampled.

5. Test conditions as specified with the output loading

as shown in Fig. 1 unless otherwise noted.

6. Output loading is specified with CL = 5 pF as in Fig.

2.

7. At any given temperature and voltage condition,

tKQHZ is less than tKQLZ and tOEHZ is less than

tOELZ.

8. A READ cycle is defined by byte write enables all

HIGH or ADSP LOW along with chip enables

being active for the required setup and hold times. A

WRITE cycle is defined by at one byte or all byte

WRITE per READ/WRITE TRUTH TABLE.

9. OE is a "don't care" when a byte write enable is

sampled LOW.

10.This is a synchronous device. All synchronous inputs

must meet specified setup and hold time, except for

"don't care" as defined in the truth table.

11.AC I/O curves are available upon request.

12."Device Deselected means the device is in

POWER-DOWN mode as defined in the truth table.

"Device Selected" means the device is active.

13.Typical values are measured at 3.3V, 25°C and 20ns

cycle time.

14.MODE pin has an internal pull-up and exhibits an

input leakage current of ± 10µA.

OUTPUT LOADS

DQ

Z0 = 50 ohm

50

ohm

V t = 1.5V

Fig. 1 output load equivalent

DQ

351

ohm

3 .3 V

317

ohm

5 pF

Fig. 2 output load equivalent

(for tK Q H Z ,tK Q L Z ,tO E H Z ,tO E L Z )

Taiwan Memory Technology, Inc. reserves the right P.10

to change products or specifications without notice.

Publication Date: JUL. 2002

Revision: A

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